The science of today is the technology of tomorrow.(www.techaneesh.blogspot.com) A technical blog since 2007......
Saturday, July 20, 2013
Friday, July 19, 2013
"artificial skin" that senses touch, humidity and temperature....
Breakthrough could lead to "artificial skin" that senses touch, humidity and temperature
Using tiny gold particles and a kind of resin, a team of scientists at the Technion-Israel Institute of Technology has discovered how to make a new kind of flexible sensor that one day could be integrated into electronic skin, or e-skin. If scientists learn how to attach e-skin to prosthetic limbs, people with amputations might once again be able to feel changes in their environments. The findings appear in the June issue of ACS Applied Materials & Interfaces.
The secret lies in the sensor's ability to detect three kinds of data simultaneously. While current kinds of e-skin detect only touch, the Technion team's invention "can simultaneously sense touch, humidity, and temperature, as real skin can do," says research team leader Professor Hossam Haick. Additionally, the new system "is at least 10 times more sensitive in touch than the currently existing touch-based e-skin systems."
Researchers have long been interested in flexible sensors, but have had trouble adapting them for real-world use. To make its way into mainstream society, a flexible sensor would have to run on low voltage (so it would be compatible with the batteries in today's portable devices), measure a wide range of pressures, and make more than one measurement at a time, including humidity, temperature, pressure, and the presence of chemicals. In addition, these sensors would also have to be able to be made quickly, easily, and cheaply.
The Technion team's sensor has all of these qualities. The secret is the use of monolayer-capped nanoparticles that are only 5-8 nanometers in diameter. They are made of gold and surrounded by connector molecules called ligands. In fact, "monolayer-capped nanoparticles can be thought of as flowers, where the center of the flower is the gold or metal nanoparticle and the petals are the monolayer of organic ligands that generally
The team discovered that when these nanoparticles are laid on top of a substrate – in this case, made of PET (flexible polyethylene terephthalate), the same plastic found in soda bottles – the resulting compound conducted electricity differently depending on how the substrate was bent. (The bending motion brings some particles closer to others, increasing how quickly electrons can pass between them.) This electrical property means that the sensor can detect a large range of pressures, from tens of milligrams to tens of grams.
"The sensor is very stable and can be attached to any surface shape while keeping the function stable," says Dr. Nir Peled, Head of the Thoracic Cancer Research and Detection Center at Israel's Sheba Medical Center, who was not involved in the research.
And by varying how thick the substrate is, as well as what it is made of, scientists can modify how sensitive the sensor is. Because these sensors can be customized, they could in the future perform a variety of other tasks, including monitoring strain on bridges and detecting cracks in engines.
"Indeed," says Dr. Peled, "the development of the artificial skin as biosensor by Professor Haick and his team is another breakthrough that puts nanotechnology at the front of the diagnostic era."
The research team also included Meital Segev-Bar and Gregory Shuster, graduate students in the Technion's Russell Berrie Nanotechnology Institute, as well as Avigail Landman and Maayan Nir-Shapira, undergraduate students in the Technion's Chemical Engineering Department. Landman and Nir-Shapira are recipients of this year's Norman and Barbara Seiden Family Prizes For Multidisciplinary Undergraduate Student Projects in Optoelectronics, Microelectronics and Nanosciences.
Surgeons could one day restore lost feeling in humans by using artificial skin that's been augmented with flexible sensors, and a new development from researchers at the Technion-Israel Institute of Technology may bring that closer to reality. The research team has developed a flexible sensor that can detect touch, temperature, and humidity — and can reportedly be built at a low cost. Lead researcher Hossam Haick told the American Technion Society that it is the first artificial skin sensor built with the ability to detect temperature and humidity, and that its touch sensitivity is 10 times greater than any electronic skin that came before it.
Even though it's the first artificial skin sensor to record temperature and humidity, the researchers say that it can sense them quite accurately, reporting back with only a small margin of error for each. The technology is based on gold nanoparticles that are mounted to metal and a flexible plastic. According to the Technion Society, varying the thickness of that plastic can increase or decrease the sensor's overall sensitivity. That setup apparently allows the device to run off of common low-voltage batteries as well — an important trait for what will eventually be a portable sensor. The researchers have already built a prototype of the flexible device, and they believe that it will eventually be adaptable into various types of electronic skin.
Friday, July 12, 2013
3D Transistors: Better Performance at Even Lower Power
3D Transistors: Better Performance at Even Lower Power
Technology has progressed quite swiftly, since one of the greatest inventions-transistor, paving way for more powerful, cost-effective and energy efficient products. For the first time in history, silicon transistors have entered the third dimension with the Tri-Gate transistors. Read on to find out it's features, structure and how it benefits the new-age processors.
So
what comes to your mind when you hear the word 'Intel'? Definitely, a
manufacturer of all your celeron's, pentium's, dual cores, core i's, and
other micro-processor chips, right? The pace dictated by Moore's Law
has required numerous innovations and as a result of which the 'Sponsors
of Tomorrow' introduced a three dimensional transistor technology,
which is basically, Tri-Gate transistors on its 22 nm logic technology.
Important Turning Point in Transistor Technology
In
1947, the first transistor was demonstrated at Bell Laboratories.
Silicon was first used to produce bipolar transistors in 1954, but it
was not until 1960 that the first silicon metal oxide semiconductor
field-effect transistor (MOSFET) was built. The earliest MOSFETs were 2D
planar devices with current flowing along the surface of the silicon
under the gate. The basic structure of MOSFET devices has remained
substantially unchanged for over 50 years.
Continued optimization
and manufacturability studies on 3-D transistor structures was on at
research and development organizations in leading semiconductor
companies. Some of the process and patent development has been published
and publicly shared, and some remained in corporate labs. The
International Technology Roadmap for Semiconductors (ITRS) drives the
research investment interests of the semiconductor industry, which is
coordinated and published by a consortium of manufacturers, suppliers,
and research institutes.
The ITRS defines transistor technology
requirements to achieve continued improvement in performance, power, and
density along with options which should be explored to achieve the
goals. The ITRS and its public documentation captures conclusions and
recommendations regarding manufacturing capabilities like strained
silicon and High-K metal gate, and now the use of 3-D transistor
technologies to maintain the benefits of Moore’s law. Based on documents
produced by the ITRS and an examination of academic papers and patent
filings, research into 3-D transistor technologies has grown
dramatically in the last decade.
The Triggers That Threw Spotlight on 3-D Transistors
Two
important pronouncements that have occurred in the last two years that
have propelled the 3-D transistor structure into the industry spotlight,
and into a permanent place in the technology story of MOSFET
transistors are 1) The first announcement by Intel Corporation on 4th of
May, 2011, about their Tri-Gate transistor design that had been
selected for the design and manufacture of their 22 nm semiconductor
products. 2) The second announcement was the publication of ITRS
technology roadmaps, with contributions from many other semiconductor
manufacturing companies that identified 3-D transistor technology as the
primary enabler of all incremental semiconductor improvement beyond the
20 nm or 22 nm design node.
So Exactly How Small is 20 nano-meter?
Each
and every micro-processor manufactured today is made of millions, or
even billions, of tiny electrical components called transistors. Over
time, in accordance with Moore's law, transistors have been getting
smaller and smaller and because of which, computing and communication
devices continue to get smarter, faster and highly efficient.
Intel
believes that keeping up with Moore's Law has never been exactly easy.
Especially for 22 nanometers, Intel claims that it became clear early on
that continued shrinking was not going to give the expected benefits
without some radical redesign. After a decade of research and
development, taking advantage of the work of Hisamoto and others in
FinFET development and optimization, Intel invented the solution. For
the first time in history, the transistor has officially entered the 3rd
dimension. Image 1 shows what a 3D transistor looks like.

Image 1: A 3D transistor chip
In
fact, there are more than a billion transistors on this single chip
which, unfortunately, are far too small to be seen with the naked eye.
Now imagine yourself 20,000 times smaller! To give you a point of
reference, right now, you are even smaller than a human hair. But you
would actually still be far too large when compared to a 22 nano-meter
transistor for a meaningful imagination. You actually need to be 100
nano-meters tall or about 20 million times smaller than your actual
size. At this scale, you are about the right size to literally see,
demonstrate some of the attributes and functions of a single, modern
transistor out of those millions of transistors inside the 3D transistor
chip. Well, since there's no such shrinking device as yet, let us just
consider the figures below as transistors models and understand.
But first, what are 2-D transistors?

Image 2: Traditional Planar 2-D Transistor
For
the last four decades, planar or 2-D transistors, have been at the core
of transistor design and architecture. In the image-2, we see a form of
silicon that creates a stream (dotted yellow) through which electrons
flow. The gate, which is made of metal over a material with high
dielectric constant, controls the flow of electricity in that stream. It
acts as an ordinary switch, turning flow on and off. That is, if an
ordinary switch had the ability to turn itself on and off over 100
billion times a second! Technically, traditional 2-D planar transistors
form a conducting channel in the silicon region under the gate electrode
when in the “on” state. Talking about states, some key objectives in
transistor design are to have as much current flowing as possible when
in the “on state” for performance, to have as close to zero current
flowing when it is in the “off” state to minimize power usage, and to
switch very quickly between the two states again, for performance.
Now Coming to 3-D Transistors...

Image 3: 22nm Trigate Transistor
As
transistors get ever smaller, one way to achieve this is to get tighter
control, by having the gate wrap around the channel as much as
possible. The animated version of the transistor can be seen in image-3.
With Intel's 3D transistor's architecture, the flat two dimensional
stream has been replaced with one or more three-dimensional fins as
shown in the image-4.

Image 4: 22nm Trigate Transistor
The
control is on all the three sides of each fin, rather than just one, as
in the the Planar 2-D transistor. In simpler terms, the transistor
channel is raised into the 3rd dimension. Current flow is controlled on
three sides of the channel (top,left and right). This is called a
Tri-Gate transistor and its real advantage over Planar is the ability to
operate at lower voltage with lower leakage, providing an unprecedented
combination of improved performance and energy efficiency. This
breakthrough invention allows Intel to create transistors that are
smaller, faster and use less power than ever before, enabling a new
generation of computing technology in every category, from the fastest
super computers to the smallest hand-held devices. Tri-Gate transistors
can have multiple fins (as shown in image 5) connected together to
increase total drive strength for higher performance.

Image 5: Tri-Gate transistors with multiple fins
The Real Deal With 3D
The
3-D geometry and structure of the Tri-Gate transistor provides a host
of important improvements over the planar transistor structure, all
related to the ‘wrap-around’ effect of the MOSFET ‘gate’ around the
source-to-drain ‘channel.’ These advantages manifest in improved
performance, reduced active and leakage power, transistor design
density, and a reduction in transistor susceptibility to charged
particle single event upsets (SEU).
The power advantage results
from the improved control of the channel by the gate’s electric field on
three sides of the fin. As explained by Intel Corporation at their
Intel Developer Forums (2011, 2012), this power advantage is created by
an effectively steeper transistor voltage curve for Tri-Gate
transistors. Transistor designers can take advantage of this steeper
curve with either a significant reduction in leakage current for the
same performance of a planar transistor, or substantially higher
performance (transistor operation speed), or a combination of both.
The Real Advantage of Tri-Gate Transistors
·More than 50% power reduction at constant performance.
·37% performance increase at low voltage.
·Improved performance and efficiency.
"For
years we have seen limits to how small transistors can get," said
Gordon E. Moore. "This change in the basic structure is a truly
revolutionary approach, and one that should allow Moore's Law, and the
historic pace of innovation, to continue." - Gordon E. Moore
"The
performance gains and power savings of Intel's unique 3-D Tri-Gate
transistors are like nothing we've seen before. This milestone is going
further than simply keeping up with Moore's Law. The low-voltage and
low-power benefits far exceed what we typically see from one process
generation to the next. It will give product designers the flexibility
to make current devices smarter and wholly new ones possible. We believe
this breakthrough will extend Intel's lead even further over the rest
of the semiconductor industry." - Mark Bohr, Intel Senior Fellow
FUN FACTS: EXACTLY HOW SMALL (AND COOL) IS 22 NANOMETERS?
The
original transistor built by Bell Labs in 1947 was large enough that it
was pieced together by hand. By contrast, more than 100 million 22nm
tri-gate transistors could fit onto the head of a pin*.
More than 6 million 22nm tri-gate transistors could fit in the period# at the end of this sentence.
A 22nm tri-gate transistor's gates that are so small, you could fit more than 4000 of them across the width of a human hair^.
If
a typical house shrunk as transistors have, you would not be able to
see a house without a microscope. To see a 22nm feature with the naked
eye, you would have to enlarge a chip to be larger than a house. (4)
Compared
to Intel's first microprocessor, the 4004, introduced in 1971, a 22nm
CPU runs over 4000 times as fast and each transistor uses about 5000
times less energy. The price per transistor has dropped by a factor of
about 50,000.
A 22nm transistor can switch on and off well over
100 billion times in one second. It would take you around 2000 years to
flick a light switch on and off that many times**.
It's one thing
to design a tri-gate transistor but quite another to get it into high
volume manufacturing. Intel's factories produce over 5 billion
transistors every second. That's 150,000,000,000,000,000 transistors per
year, the equivalent of over 20 million transistors for every man,
woman and child on earth.
*A pin head is about 1.5 mm in diameter.
#A period is estimated to be 1/10 square millimeter in area.
^A human hair is about 90 microns in diameter.
(4)The smallest feature visible to the naked eye is 40 microns.
**Assumes a person can flick a light switch on and off 150 times per minute.
Table Courtesy – Intel's Press Material on 22 nm 3-D transistor technology
Tri-Gate Devices Now in Production

Image 6: 22nm Manufacturing Fabs
The
advanced state of semiconductor manufacturing at very small geometries
(40 nm, 28 nm, 22 nm or 20 nm and beyond) requires research and
development expenditures that now limit this technology to a handful of
companies with capital expenditure capabilities in the billions of
dollars. As a result, only a handful of manufacturers are able to
capitalize on the known advantages of 3-D transistor technology. Intel
Corporation is the only company to have made this
design and manufacturing transition in 22 nm technology, and can provide
data on the overall maturity and manufacturability of Tri-Gate
transistors on a mass production scale. This data, as of the first
quarter of 2013, includes 100 million units of Tri-Gate transistorbased
products.

Image 7: Gates and Fins of 22 nm 3-D transistor
Several known issues and characteristics of the 3-D gate structure
have been acknowledged and addressed to achieve manufacturing and
design maturity with the technology. These include the modeling of new
parasitic capacitance values not modeled in traditional planar designs,
layout dependent effects, and the use of double-patterning techniques
using current lithographic equipment to form closely spaced fins. A
great deal of publicity and user education is underway in 2013 by
companies like Cadence and Synopsys revolving around the impact of
Tri-Gate rules and flexibility in the design of future semiconductor
products.
Impact on FPGA and Other Semiconductor Device Performance
Let's
see how this three dimensional technology will provide a significant
boost in the capabilities of high-performance programmable logic.
The
primary advantage of Tri-Gate technology to FPGA-based electronic
product designer is the continuation of Moore’s Law in the steady march
of improvements in transistor density, performance, power, and
cost-per-transistor. This sustains an industry of consumer electronics,
computing platform development, software complexity advances, memory and
storage growth, mobile device creativity and development, and business
automation and productivity.In addition, control over the static and
active power dissipation of semiconductors improves tremendously with
this technology. For users of FPGAs, this makes programmable logic that
advances to 14 nm technology and beyond both power competitive with ASIC
and ASSP design solutions on available competing design nodes, with
even more significant advantages in programmability, performance,
flexibility, Open Computing Language (OpenCL™) software design entry,
and integration of DSP, transceiver, hardened processor, and
configurable I/Os.
Image 1: A 3D transistor chip
Image 2: Traditional Planar 2-D Transistor
Image 3: 22nm Trigate Transistor
Image 4: 22nm Trigate Transistor
Image 5: Tri-Gate transistors with multiple fins
More than 6 million 22nm tri-gate transistors could fit in the period# at the end of this sentence.
A 22nm tri-gate transistor's gates that are so small, you could fit more than 4000 of them across the width of a human hair^.
If a typical house shrunk as transistors have, you would not be able to see a house without a microscope. To see a 22nm feature with the naked eye, you would have to enlarge a chip to be larger than a house. (4)
Compared to Intel's first microprocessor, the 4004, introduced in 1971, a 22nm CPU runs over 4000 times as fast and each transistor uses about 5000 times less energy. The price per transistor has dropped by a factor of about 50,000.
A 22nm transistor can switch on and off well over 100 billion times in one second. It would take you around 2000 years to flick a light switch on and off that many times**.
It's one thing to design a tri-gate transistor but quite another to get it into high volume manufacturing. Intel's factories produce over 5 billion transistors every second. That's 150,000,000,000,000,000 transistors per year, the equivalent of over 20 million transistors for every man, woman and child on earth.
*A pin head is about 1.5 mm in diameter.
#A period is estimated to be 1/10 square millimeter in area.
^A human hair is about 90 microns in diameter.
(4)The smallest feature visible to the naked eye is 40 microns.
**Assumes a person can flick a light switch on and off 150 times per minute.
Table Courtesy – Intel's Press Material on 22 nm 3-D transistor technology
Image 6: 22nm Manufacturing Fabs
Image 7: Gates and Fins of 22 nm 3-D transistor
Monday, July 8, 2013
Rooftop Solar Plants a Viable Business Opportunity.
Rooftop Solar Plants a Viable Business Opportunity.
Solar rooftop installations are a good investment option considering both tangible and intangible benefits.

For
organisations planning to shift from conventional energy to solar power
use, a rooftop solar photovoltaic (PV) power plant can not only be a
money saver but also money spinner with excess power supplied to the
utility grid. While the Ministry of New and Renewable Energy (MNRE) is
still in the process of laying down specificationsfor incentives,
experts feel that with the right policies and execution, solar rooftop
installations can be a hot trend in green technology. It is a profitabl
business concept, and hence a viable investment option.
Installation and Requirements
When
solar PV modules are installed on a building’s rooftop to generate
solar power, it is called a rooftop power plant. Rooftop PV installation
can either be done for standalone use or to feed into the grid.
Some
of the factors to consider before installing a solar power plant on
your building’s rooftop include electrical load, current rate, roof
size, load capacity and geographic location of the building. The subsidy
given by the central and state governments, local utilities, and local
community regulations and incentives are also some key determinants in
the evaluation.
Rooftop solar arrays are best installed on a
large and flatroof where direct sunlight without shadow from the
surrounding structures is available. If there is shadow on a part of the
terrace during the day, PV solar panels are unable to harvest the sun’s
energy for that period of time. Let us look at the key considerations
while evaluating solar rooftop options.
First, it is important
to have a basic understanding of the components of a solar power system
and how these generate electricity. PV solar power systems are very
simple electric power generating systems comprising the following basic
components:
1. A set of PV panels that convert sunlight (photons) into direct-current (DC) electricity
2. A racking system that firml holds the panels to the roof, exposing these to the sun at an advantageous angle
3. Inverters that convert DC electricity into alternating current (AC) electricity
4. Wiring that connects everything
5.
A storage battery (in the case of a grid-fed power plant, a large-sized
battery is not necessary to store and use that power after sunset)
6. A variety of means to tilt the panels toward the sun to generate more electricity
7. Energy meters to record the en-ergy that is supplied to the grid
8. Junction boxes
9. Earthing kits
Currently,
commercially available silicon-based solar PV panels are made from
solar cells encased in a special type of toughened glass. Silicon solar
modules have been in the fieldfor more than 50 years and perform quite
predictably. These are guaranteed for 25 years of feld life but the
power yield drops about 0.6 per cent a year. One can use monocrystalline
(made from a single crystal) or polycrystalline (made from multiple
crystals) panels. Monocrystalline panels are a little more efficientbut
the cost per watt is almost the same.
How to supply solar power to the grid?
If
the solar power generated from a rooftop installation is to be injected
into the grid, one needs to enter into a power purchase agreement (PPA)
with the local distribution utility in whose area the solar system is
located. Under this agreement, a tariff is determined by the appropriate
State Electricity Regulatory Commission (SERC). However, the issues
related to grid integration, metering, measurement and energy accounting
for projects are under consideration with the government.
There
is no cost involved in the transmission of energy unless the power is
transmitted at high tension (HT) levels (11 kV or 33 kV), and special
monitoring and metering hardware are deployed at HT levels. In the
current scenario, metering arrangements for rooftop grid-interactive
power plants are under active consideration by the government.
While
no special arrangements are required to inject power into the grid,
there is a safety aspect that needs to be factored in while transmitting
energy. There is always a risk involved, as when the grid fails the
solar power system automatically stops injecting power into the grid.
This is called islanding, where the inverter isolates itself. This is a
standard feature built into solar power inverters, making these safe for
residential and commercial applications. A standalone feature in the
inverter would enable captive consumption of the solar power generated
in the event of any grid outage.
Copper-indium
gallium-diselenide (CIGS) panels may become the preferred type for
commercial rooftop projects in another fiveyears. These have the
potential to deliver reasonable efficienciesat a lower cost than
traditional crystalline panels. However, the cost per watt may not
necessarily go down, only the panel size per watt may drop. Today, solar
panels (depending on the brand) are bankable, that is, banks loan
capital for their purchase.
The solar energy can be used for
captive consumption or exported to the grid. The electrical energy (DC)
or the solar power generated by the solar PV modules during the sunshine
hours is stored in the batteries for use, as and when required. The
energy stored in the batteries is converted into 230V AC mains using an
inverter. This energy automatically synchronises with the grid and gets
injected into it.
Installation by integrators
Many
solar system installers and owners have had good experience in anchoring
the panel structures. This has to be done scientificallyand with care.
It is possible to have non-anchored installation systems but these need
to be very carefully designed to with-stand heavy winds. Such systems
are designed to connect the solar power system to a roof using weights,
rather than fasteners that must be anchored to the roof.
Solar
installation companies, often called integrators, can complete a small
rooftop project within a few weeks. Before signing a contract with an
integrator, evaluate the roof for solar installation with respect to:
Roof
condition. The roof should be in a good state prior to solar
installation. If it needs significantrepair or replacement, get this
done before installing the solar array.
Space availability. Solar power projects work best on flat roofs without obstructions.
Weight
load. Some roofs are not designed to hold much additional weight.
Ascertain the acceptable weight you can add to your roof before signing a
contract.
Investments involved
Of all the components
of a solar PV plant, solar module accounts for the biggest cost—it can
be 70 per cent of the total project cost. The cost per watt is currently
Rs 130-150 ex-factory. The investment primarily depends upon the size
of the power plant, which varies from a small kilowatt to multi-megawatt
plant. At present, good-quality off-grid rooftop solar power plants can
be installed at a cost of Rs 250,000 per kW.
Under the National
Solar Mission policy, the benchmark price for an off-grid system is Rs
270,000 per kW peak. For a grid-connected system, it is Rs 190,000 per
kW peak. The government also provides a 30 per cent subsidy on the
benchmark price. Installation costs would differ in case of remote
installations and poor site conditions.
Economic advantages
The
total investment per kW in a small power plant, for example, 10kW, will
be the same if not less than in a large 5MW plant. It is therefore
viable to go for small grid-fed plants owned by small privately-owned
utilities. A buying rate of Rs 17 or 18 per unit of electricity from
such plants will attract thousands of small investors like a magnet. In
most areas in India, solar power can then be a fiscallysound investment
that reduces electricity payments immediately, as well as hedges the
small solar plant owners against local utility price increases.
If
solar power is fed into a small city grid like Miraj, Ratnagiri or
Ratlam, all consumers in that area will get cleaner uninterrupted power
from the local copper grid. The high impedance of the local grid helps
power to remain local, improving the local power quality. That’s why all
other countries in the world allow solar plant owners to feed power
into the local grid at the low voltage end.
It therefore makes
sense to set up a solar rooftop plant in cities or towns facing severe
electricity shortages. Today, the cost of generating electricity using a
diesel generation (DG) set is in the range of Rs 20-22 per unit,
whereas generating solar power costs only Rs 13-15 per unit.
Based
on the current prices and assuming that one takes advantage of the 80
per cent depreciation permitted on such investments, in the firstyear
the cost of power per unit (kWh) from a well-maintained solar plant will
be less than Rs 8 per watt for a plant of any capacity between 5 kW and
1 MW. Thus solar rooftop installation is a good investment option
considering both tangible and intangible benefits.
Eligibility criteria for project proponent
While
the government is yet to announce the policy for rooftop grid-connected
power plants, it has laid down certain guidelines for rooftop PV and
other small solar power plants connected to distribution networks at
voltage levels below 33 kV. Hereinafter, the programme is referred to as
Rooftop PV & Small Solar Power Generation Programme (RPSSGP).
Technical criteria.
The project schemes that propose to deploy PV modules and inverter
systems are considered to be technically qualified and eligible for
participation in the RPSSGP scheme only if these comply with relevant
IEC/BIS standards and/or applicable standards as specified by the
Central Electricity Authority (CEA). For solar PV projects to be
selected under this scheme, it is mandatory that these are based on
crystalline silicon technology and use modules manufactured in India.
There will be no mandatory domestic content requirement for projects
based on other technologies. For solar thermal technology, it is
mandatory that the technology is demonstrated and such projects should
be operational for one year. Project proponents should submit
documentary evidence and an undertaking in this regard along with their
applications to the competent authority in the state.
Metering arrangements.
Metering arrangements should be made by the project proponents in
consultation with the distribution utility keeping in view the
guidelines or regulations notified by the respective state electricity
regulatory commissions, if any. Meters should comply with the
requirements of CEA regulations on the meter installation and operation.
Financial criteria.
The project proponents should submit their letters of commitment along
with board resolution for equity investments in the project, calculated
on the basis of Rs 40 million per megawatt on a pro-rata basis.
Infrastructure criteria for land requirement.
The project proponents should make arrangements for land required for
the project as per conditions outlined by respective state competent
authority.
Infrastructure criteria for grid connectivity requirement. The
plant should be designed for interconnection with the grid at the
distribution network at the voltage level depending on the installed
capacity of the rooftop PV or small solar system generator.
(For the complete requirement list please visit www.mnre.gov.in)
The
government is also encouraging the use of rooftop power plants as a
substitute for diesel-consuming and polluting DG sets. Most commercial
buildings are dependent on diesel generators during power cuts.
Investing in a rooftop solar power plant can offset diesel consumption
and make the returns attractive. Added to this, the 30 per cent central
finance assistance (CFA) in the form of capital subsidy would encourage
investors. With a rooftop installation, one can recover the project’s
cost within five t six years. Also, typically, a solar power plant has a
life of 25 years with proper maintenance.
The return on
investment (ROI) completely depends on the power purchase agreement
signed by the project developer. While earlier the buying rate for power
was Rs 17 per unit, today companies are ready to sell it at Rs 11 per
unit, making only a marginal profit.Considering the current trend, the
power purchase price can be estimated at Rs 13-14, so one can expect ROI
within six to seven years.
More benefits for commercial units
Rooftop
installation makes more sense for commercial establishments as these
can utilise the solar power during peak-load daytime periods, thus
saving the money required to set up battery banks. Any amount of power
not used can be stored in a battery bank for use at night when energy
consumption is the least (about 10 per cent compared to the day).
There is no cost involved in the transmission of energy unless the power is transmitted at high tension (HT) levels (11 kV or 33 kV), and special monitoring and metering hardware are deployed at HT levels. In the current scenario, metering arrangements for rooftop grid-interactive power plants are under active consideration by the government.
While no special arrangements are required to inject power into the grid, there is a safety aspect that needs to be factored in while transmitting energy. There is always a risk involved, as when the grid fails the solar power system automatically stops injecting power into the grid. This is called islanding, where the inverter isolates itself. This is a standard feature built into solar power inverters, making these safe for residential and commercial applications. A standalone feature in the inverter would enable captive consumption of the solar power generated in the event of any grid outage.
Technical criteria. The project schemes that propose to deploy PV modules and inverter systems are considered to be technically qualified and eligible for participation in the RPSSGP scheme only if these comply with relevant IEC/BIS standards and/or applicable standards as specified by the Central Electricity Authority (CEA). For solar PV projects to be selected under this scheme, it is mandatory that these are based on crystalline silicon technology and use modules manufactured in India. There will be no mandatory domestic content requirement for projects based on other technologies. For solar thermal technology, it is mandatory that the technology is demonstrated and such projects should be operational for one year. Project proponents should submit documentary evidence and an undertaking in this regard along with their applications to the competent authority in the state.
Metering arrangements. Metering arrangements should be made by the project proponents in consultation with the distribution utility keeping in view the guidelines or regulations notified by the respective state electricity regulatory commissions, if any. Meters should comply with the requirements of CEA regulations on the meter installation and operation.
Financial criteria. The project proponents should submit their letters of commitment along with board resolution for equity investments in the project, calculated on the basis of Rs 40 million per megawatt on a pro-rata basis.
Infrastructure criteria for land requirement. The project proponents should make arrangements for land required for the project as per conditions outlined by respective state competent authority.
Infrastructure criteria for grid connectivity requirement. The plant should be designed for interconnection with the grid at the distribution network at the voltage level depending on the installed capacity of the rooftop PV or small solar system generator.
(For the complete requirement list please visit www.mnre.gov.in)
Tuesday, July 2, 2013
Scientists create nanoscopic data storage using graphene ‘paper’ and electron ‘ink’
Scientists create nanoscopic data storage using graphene ‘paper’ and electron ‘ink’.
Using graphene “paper” and electron “ink,” Danish and Chinese scientists have created one of the tiniest data storage methods ever devised. In the photo above, captured by a scanning transmission electron microscope (STEM), the thickness of the lines — the font size if you will — is just 2-3nm, or about 50,000 times thinner than a human hair. This technique could eventually be used as a means of nanoscale data storage (can you imagine storing the entire Library of Congress on a single gram of graphene?), or to create graphene-based computer circuits.
As you’re probably aware by now, graphene naturally forms into sheets that are just one atom thick. Gaphene, by virtue of being constructed out of carbon atoms, which are rather small, is the world’s thinnest known material. Interacting with a sheet material that is just one atom thick, however, is rather hard; or, in writing terms, it’s hard to find a suitable “ink.” You can use self-assembly (bottom-up), which uses external factors to control exactly where the graphene grows, but it’s very hard to do this repeatedly at an atomic scale without errors. The other option is lithography (top-down), where you start with a sheet of graphene and burn/etch away the pieces that you don’t need — but to do this, you need to focus an energy source, and there are some pesky laws of physics that get in the way when you approach atomic scales. (See: Graphene aerogel is seven times lighter than air, can balance on a blade of grass.)
The solution, according to researchers at the Technical University of Denmark in Roskilde and Tsinghua University in Beijing, is to combine both the top-down and bottom-up approaches. To do this, the researchers first fire high-energy electrons (300 kiloelectron volts) at a sheet of graphene using a scanning transmission electron microscope (STEM), which has a tip that’s just one nanometer in diameter. These electrons have enough energy to break the carbon-carbon bonds, kicking off carbon atoms and leaving dangling bonds. These loose carbon atoms then rejoin in a messy fashion, creating a region of amorphous carbon that looks very different from the surrounding graphene. By drawing lines, letters, and shapes with the STEM, the researchers leave behind a trail of amorphous carbon — which is what you see in the image at the top of the story.
According to the researchers, this technique offers both high resolution and good controllability/repeatability, which in turn could lead to nanoscale writing being used in nanoscopic data storage and electronics. The big problem, of course, is that a STEM is a room-sized piece of equipment — and, at least for the time being, we’re unlikely to invent a small, cheap device that brings graphene paper and electron ink to the mass market. That’s why the hard drive is still top of the heap when it comes to mass storage: The magnetic grains on a hard drive platter might be 50nm across, rather than the 2nm of graphene paper and ink, but a hard drive performs millions of read/write operations per minute — and it’s smaller than a deck of cards. It will be a long time until anything comes close to supplanting the hard drive.
Graphene aerogel is seven times lighter than air, can balance on a blade of grass
Chinese material scientists have created the world’s lightest material: A graphene aerogel that is seven times lighter than air, and 12% lighter than the previous record holder (aerographite). A cubic centimeter of the graphene aerogel weighs just 0.16 milligrams — or, if you’re having a problem conceptualizing that, a cubic meter weighs just 160 grams (5.6 ounces). The graphene aerogel is so light that an cube inch of the stuff can be balanced on a blade of grass, the stamen of a flower, or the fluffy seed head of a dandelion (see pictures below).
Most aerogels are produced using a sol-gel process, where a gel is dehydrated until only the aerogel remains. Some aerogels are also produced using the template method — aerographite, for example, is created by growing carbon on a lattice (template) of zinc oxide crystals — and then the zinc oxide is removed in an oven, leaving just the carbon aerogel. To create the graphene aerogel, however, researchers at Zhejiang University use a novel freeze-drying method. Basically, it seems like the researchers create a solution of graphene and carbon nanotubes, pour it into a mold, and then freeze dry it. Freeze drying dehydrates the solution, leaving single-atom-thick layers of graphene, supported by carbon nanotubes. The researchers say that there’s no limit to the size of the container: You could make a mini graphene aerogel using this process, or a meter-cubed aerogel if you wish.
Graphene aerogel, propped up on the stamen of a flower. The cube, which is roughly an inch across, probably weighs less than 5 milligrams.
The end result is an aerogel that weighs just 0.16 milligrams per cubic centimeter, and has truly superb elasticity and absorption. The graphene aerogel can recover completely after more than 90% compression, and absorb up to 900 times its own weight in oil, at a rate of 68.8 grams per second. With these two features combined, lead researcher Gao Chao hopes that the material might be used to mop up oil spills, squeezed to reclaim the oil, and then thrown back in the ocean to mop up more oil. Beyond filtration, graphene aerogel might be used as insulation — or, if it’s as conductive as aerographite (which seems likely), graphene aerogel could enable the creation of lighter, higher-energy-density batteries.
Over the next few pages we’ve compiled some amazing photos of aerogels. Click through if you want to see lumps of carbon balancing on a blade of grass, centimeter-thick slabs of aerogel that can insulate against the blue flame of a Bunsen burner, or a two-gram piece of aerogel that can hold up a 2.5-kilogram brick
Sunday, June 30, 2013
Now a battery made out of wood!
Now a battery made out of wood!.
In an era where it is cool to be environmentally aware, scientists at the University of Maryland have come up with a formula for batteries that can be counted as cool. These batteries have wood as a major element in their formation, besides fiber and sodium, making them sodium powered batteries. Sodium-ion batteries are, incidentally considered less powerful and efficient than their lithium-ion counterparts. That doesn’t however mean that these batteries can’t be useful.
According to the team of these scientists, these wooden batteries might not end up within your smartphone or your laptop or in any other fancy gadget, but they are extremely useful for storing power on a large scale basis, given the fact that they are good for storing electrolytes as they can swell and contract many times over.
The side effect of the process, which will lead to erosion in battery capacity is the fact that the wood wrinkles due to the stress involved, but this doesn’t stop the battery from working, In fact, according to the claims of these scientists, the batteries can be charged and recharged over 400 cycles and have a capacity of 339 mAh/g. This will only increase as the scientists better the design.
Large scale production, however, is still some way off as what has been revealed is a working prototype at best. The discovery, however, does bode well for the future given the fact that, this is, in essence a low cost, environmentally friendly battery tech.
“The inspiration behind the idea comes from the trees. Wood fibers that make up a tree once held mineral-rich water, and so are ideal for storing liquid electrolytes, making them not only the base but an active part of the battery,” says Hu, an assistant professor of materials science, at the University.
E-waste Management In India
E-waste Management In India.
You are welcome to change your personal computer, cell phone, refrigerator, or for that matter any electronic or electrical gadget, but be careful while disposing of the old one. Throwing it into the dustbin is not the proper disposal of an electronic equipment which has attained obsolescence as per your judgement.
It may end up adding to e-waste, which creates problems for the ecology in general and directly or indirectly for the living beings around there through air, water and soil pollution.
What is e-waste?
Electronic waste (e-waste) comprises waste electronics/electrical goods that are not fit for their originally intended use or have reached their end of life. This may include items such as computers, servers, mainframes, monitors, CDs, printers, scanners, copiers, calculators, fax machines, battery cells, cellular phones, transceivers, TVs, medical apparatus and electronic components besides white goods such as refrigerators and air-conditioners.
E-waste contains valuable materials such as copper, silver, gold and platinum which could be processed for their recovery.
Is e-waste hazardous?
E-waste is not hazardous per se. However, the hazardous constituents present in the e-waste render it hazardous when such wastes are dismantled and processed, since it is only at this stage that they pose hazard to health and environment.
Electronics and electrical equipment seem efficient and environmentally-friendly, but there are hidden dangers associated with them once these become e-waste. The harmful materials contained
in electronics products, coupled with the fast rate at which we’re replacing outdated units, pose a real danger to human health if electronics products are not properly processed prior to disposal.
The scenario
The Basel Action Network (BAN) which works for prevention of globalisation of toxic chemicals has stated in a report that 50 to 80 per cent of e-waste collected by the US is exported to India, China, Pakistan, Taiwan and a number of African countries. This is done be-cause cheaper labour is available for recycling in these countries. And in the US, export of e-waste is legal.
In India, recycling of e-waste is almost entirely left to the informal sector, which does not have adequate means to handle either the increasing quantities or certain processes, leading to intolerable risk for human health and the environment.
Dynamics of e-waste generation
Telecommunications and information technology are the fastest growing industries today not only in India but world over. Manufacturers’ Association for Information Technology (MAIT) has collected the following statistics on the growth of electronics and IT equipment in India:
1. PC sales were over 7.3 million units during 2007-08, growing by 16 per cent. There is an installed base of over 25 million units.
2. The consumer electronics market is growing at the rate of 13-15 per cent annually. It has an installed base of 120 million TVs.
3. The cellular subscriber base was up by 96.86 per cent during 2007-08. Its installed base is estimated to cross 300 million mark by 2010.
With the unprecedented induction and growth in the electronics industry, obsolescence rate has also increased. People are phasing out/replacing their IT, communication and consumer electronics equipment including white and brown goods as shown in Table II.
As per a GTZ-MAIT sponsored study conducted recently by IMRB, e-waste generated in India during 2007 was around 332,979 MT besides about 50,000 MT entering the country by way of imports. The reasons for generation of this large quantity of e-waste were unprecedented growth of the IT industry during the last decade, and the early product obsolescence due to continuous innovation. Thus the net effect is the e-waste turning into a fastest growing waste stream.
However, the total e-waste avail-able in 2007 for recycling and re-furbishing was 144,143 MT. Of this, only 19,000 MT of e-waste could be processed.
Components of e-waste management
The major components of e-waste management are:
1. e-waste collection, sorting and transportation
2. e-waste recycling; it involves dismantling, recovery of valuable resource, sale of dismantled parts and export of processed waste for precious metal recovery
The stakeholders, i.e., the people who can help in overcoming the challenges posed by e-waste, are:
1. Manufacturers
2. Users
3. Recyclers
4. Policy makers
e-waste concerns and challenges
1. Accurate figures not available for rapidly increasing e-waste volumes—generated domestically and by imports
2. Low level of awareness among manufacturers and consumers of the hazards of incorrect e-waste disposal
3. No accurate estimates of the quantity of e-waste generated and recycled available in India
4. Major portion of e-waste is processed by the informal (unorganised) sector using rudimentary techniques such as acid leaching and open-air burning, which results in severe environmental damage
5. e-waste workers have little or no knowledge of toxins in e-waste and are exposed to health hazards
6. High-risk backyard recycling operations impact vulnerable social groups like women, children and immigrant labourers
7. Inefficient recycling processes result in substantial losses of material value and resources
8. Cherry-picking by recyclers who recover precious metals (gold, platinum, silver, copper, etc) and improperly dispose of the rest, posing environmental hazards
9. No specific legislation for dealing with e-waste at present
The Ministry of Environment & Forests (MoEF) of the government of India is responsible for environmental legislation and its control. The Central Pollution Control Board (CPCB), an autonomous body under the MoEF, plays an important role in drafting guidelines and advising the MoEF on policy matters regarding environmental issues. Historically, in 2001 in cooperation with MoEF, the German Technology Cooperation (GTZ) began work on hazardous waste management in India through the advisory services in environmental management. Subsequently, Swiss Federal Laboratories for Material Testing and Research (EMPA) started to implement its global programme ‘Knowledge Partnerships in e-waste Recycling.’
Combining the knowledge and technical expertise of EMPA on e-waste management, coupled with the field experience of the Indo-German projects in managing hazardous waste in India, the Indo-German-Swiss e-waste initiative was born in 2004. The vision of this initiative is to establish a clean e-waste channel that is a:
1. Convenient collection and disposal system for large and small consumers to return all their e-waste safely
2. Voluntary system for modern and concerned producers to care for their product beyond its useful life
3. Financially secure system that makes environmentally and socially responsible e-waste recycling viable
The objectives of the initiative are:
1. Reduce the risks to the popula-tion and the pollution of the environ-ment resulting from unsafe handling
2. Focus on knowledge transfer to and skills upgrade of all involved stakeholders through trainings and seminars
3. Target mainly the existing informal recyclers allowing for their maximum but safe participation in future e-waste management by facilitating their evolution and integration in formal structures
The milestones achieved so far are:
1. Improved awareness:
• Three WEEE Care! Initiative workshops in Bangalore sup-ported by the Goethe Institute
• National e-waste workshop in Delhi, hosted by MoEF
2. Improved stakeholder engage-ment:
• Formation of the e-waste Agency (EWA) brings together industry, government and NGO to work on a sustainable e-waste management strategy for Bangalore
• First national e-waste workshop held, defined a way forward
• First national workshop on e-waste guidelines held, organised by MoEF
3. Improved estimates of e-waste:
• Rapid assessments in Delhi and Bangalore of the quantities being generated, and identification of the e-waste recycling hot-spots
• National-level desk study to assess e-waste quantities
A national-level assessment of electronics and electrical equipment waste (WEEE) by MoEF/CPCB/IRG/GTZ lists the top ten most polluting states and cities of India as shown in Tables III and IV. The figure are taken from the presentation of Dr Dilip B. Boralkar at National Conference on E-Waste Management, an Indo-German-Swiss E-Waste Initiative, at New Delhi on December 10, 2008.
The MAIT-GTZ study on e-waste found that 94 per cent of the organisations studied did not have any policy on disposal of obsolete IT products. Though many respondents (200 corporates and 400 households) were aware of e-waste, they were lacking in action.
Vinnie Mehta, executive director of the MAIT, in his presentation at National Conference on E-Waste Management (an Indo-German-Swiss E-Waste Initiative), listed the following legislations that cover different aspects of e-waste:
1. The hazardous waste (management and handling) rules, 1998 as amended in 2008 for toxic content—registration mandatory for recyclers
2. Municipal solid waste management and handling rules for non-toxic content
3. Basel convention for regulating trans-boundary movement
4. Foreign trade policy, which restricts import of second-hand computers and does not permit import of e-waste
5. Guidelines by Central Pollution Control Board (2008)
The guidelines notified in April 2008 identify and recognise:
1. Producers’ responsibility
2. RoHS (restriction on hazardous substances)
3. Best practices
4. Insight into technologies for various levels of recycling
Mehta said that the guidelines explicitly mention the need for a separate legislation for implementing producers’ responsibility. He said that e-waste is ‘distinct’ as it is an end-of-consumption waste while hazardous waste results from a distinct industrial process. The Environment Protection Act provides for separate regulations for waste with ‘distinct’ characteristics—Biomedical Wastes (M&H) Rules 1998, Batteries (M&H) Rules 2001, etc.
Advocating a separate legislation for e-waste, he said that in his recent presentation to members of the parliament he has emphasised that e-waste value chain is rather complex as it involves multiple players—producers, distributors, retailers, end consumers, collection system and recyclers—while hazardous waste chain involves only the occupier/generator and the operator. Recovery of non-ferrous metals and reprocessing of used oil are the only two major activities in hazardous waste recycling, while e-waste recycling involves refurbishment for reuse, dismantling and precious metal recovery, which is a complex process.
| Structure of the Proposed e-Waste Legislations |
| 1. Title: E-waste (Management & Handling) Rules to be published under the Environment Protection Act 2. Objective: To put in place an effective mechanism to regulate the generation, collection, storage, transportation, import, export, environmentally sound recycling, treatment and disposal of e-waste. This includes refurbishment, collection system and producer’s responsibility, thereby reducing the wastes destined for final disposal. 3. Essence: The producer of electrical and electronic equipment is responsible for the entire life cycle of its own branded product and in particular the environmentally sound end-of-life management and facilitating collection and take back. 4. Responsibility of each element in the e-waste value chain: • Producers • Dealers • Collection agencies/collection Centres • Dismantlers • Recyclers • Consumer and bulk consumers 5. Procedure for authorisation of producers, collection agencies, dismantlers, recyclers and enforcement agencies 6. Procedure for registration/renewal of registration of recyclers 7. Regulations for import of e-waste 8. Liability of producers, collection agencies, transporters, dismantlers and recyclers 9. Information & tracking 10. Elimination of hazardous substances used in e-equipment 11. Setting up of designated authority to ensure transparency, audit and inspect facilities, examine authorisation/registration, etc |
Lakshmi Raghupathy, former director in the ministry of environment and forest and an expert in e-waste management, said that governmental regulations should make the producers solely responsible for the entire life-cycle—from manufacturing to recycling—of their products.
Nitin Gupta, CEO of Attero Recycling, said enterprises should be extremely careful and responsible while throwing their unwanted computers and storage devices.
Computer manufacturers in India are slowly getting active in e-waste management. “We are working with all stakeholders in the e-waste management eco-system,” said S. Shankar, director (manufacturing and supply chain) in HP. The company has initiated a three-pronged strategy: partner with e-waste recyclers, build awareness among individual/enterprise customers and work with NGOs, recyclers, collectors and dismantlers.
Anne Cheong, senior service specialist in Dell, said each manufacturer has an individual producer responsibility. “We start from home. We have proper recycling facility in all countries including India. We are exploring that in Karnataka as well.”
Though companies claim they are taking action, many don’t believe enough is being done. “Things are very slow. Corporates are yet to understand the importance of it,” said Wilma Rodrigues, founder member of Saahas, a development organisation. Decisions related to e-waste management, she said, are still taken by junior employees in organisations, with top executives not even looking at it. Almost every company has some mention on its website on e-waste management, but very few are doing anything. The country has twelve authorised e-waste recyclers including e-Parisara and Ash in Bangalore, Tessam in Chennai and Eco-Reco in Mumbai. Ramky Group is setting up the country’s largest integrated e-waste management facility in Bangalore in collaboration with GTZ, while Attero is building an integrated e-waste recycling plant in Utter Pradesh.
D.C. Sharma, vice president of Ramky Enviro Engineers, cautioned that no player should indulge in cherry-picking, collect whatever one thinks is worth and leave the hazardous portions out. Ramky is also building a transfer storage disposal facility (landfill) for hazardous waste at Dobbespet on Tumkur Road.
Finally, through improved e-waste management in the major Indian cities, the e-waste initiatives taken in the country will achieve better environ-mental conditions. Moreover, health conditions of workers active in the e-waste recycling sector will enormously improve at the local level. As an overall effect, the living conditions for the neighbouring population will be better. The already existing schemes of e-waste recycling and material recovery, mainly in the informal sector, will be transformed to transparent and workers- and environment-friendly methods. In the long term, the problem of improper e-waste recycling will disappear due to improved methods, implementation of a take-back system and consideration of the extended producer’s responsibility.
Experience exchange on national and international levels, including know-how transfer, is being facilitated through the various initiatives. Thus, a dialogue platform for Indian and European e-waste experts has been created, opening the doors for future industries to be developed and cooperation activities to be per-formed for technology and knowledge transfer.
Microwave Tubes Making a Comeback
Microwave Tubes Making a Comeback.
Scientists are looking back at the microwave tubes for high-power and high-frequency applications because only these can handle a power of up to 300 megawatts at a frequency of 1 Ghz.
A high-power microwave system consisting of a high-power microwave tube, high-voltage measurement chamber and power conditioning unit |
In 1904, J.A. Fleming introduced the vacuum tube diode. After the second world war, electron tubes were used to develop the first generation of computers but these computers were impractical due to the large sizes of the electronic components. In 1947, John Bardeen, Walter Brattain and William Shockley demonstrated the amplifying action of the firsttransistor at Bell Telephone Laboratories. They received a Nobel Prize for it.
Bipolar transistors and digital integrated circuits (ICs) were made fist. Analogue ICs, large-scale integration (LSI) and very-large-scale integration (VLSI) followed by the mid-1970s. A VLSI design consists of thousands of circuits on a single chip with transistors acting as on/off switches or gates between them. Transistors are good for low-power and low-frequency applications. Microcomputers, medical equipment, video cameras and communication satellites are all examples of devices made possible by using ICs.
From the day of invention of vacuum tube till today, when millions of transistors are fabricated on a single chip, technology has advanced a lot. But scientists are looking back at the microwave tubes for high-power and high-frequency applications because only these can handle high power (nearly 300 megawatts) at high frequency (nearly 1 GHz).
The term ‘microwave’ denotes the techniques and concepts used as well as a range of frequencies. Microwaves travel in matter in the same manner as light waves. These are reflected by metals, absorbed by some dielectric materials and transmitted through other materials without significant losses.
The helix slows down the propagation of electrons as these travel down the tube. The electrons bunch, and reinforce the voltage in the helix, which creates amplification (Courtesy: Thales Electron Devices) |
Many R&D centres in India are actively inrolved in the advancement of microwave tubes. These include:
1. Central Electronics Engineering Research Institute, Pilani
2. Central Scientific Instruments Organisation, Chandigarh
3. Central Glass and Ceramic Research Institute, Kolkata
4. Central Mechanical Engineering Research Institute, Durgapur
5. Bharat Electronics Ltd, Bengaluru
6. Vacuum Electronics Devices and Application Society
7. Microwave Tube Research and Development Center, Bengaluru
8. Center of Research in Microwave Tubes, BHU
9. College of Engineering and Technology, Moradabad
10. Institute of Plasma Research, Gandhinagar
11. Society for Advanced Microwave Electronics Engineering & Research, Mumbai
Microwave tubes have potential applications in radar, electronic warfare and communication systems. Air-traffic-controlradars, military radars, ground penetrating radars, imaging radars, UWB radars, cloud radars and space debris radars are some types of radars that use microwave tubes. Multi-beam jammers, phase-array jammers, and ultra-high-frequency and ultra-wide-bandwidth jammers used in electronic warfare also use microwave tubes. Clouds can be seen by microwave. These tubes play a role in climate forecasting and some medical applications (used in the diagnosis of hyperthermia) as well. Besides, microwave has its utilities for common man in the form of microwave heating and microwave protective gear/wall paper/furnishing.
Basic principle of microwave devices
The efficiency of conventional tubes is largely independent of the frequency up to a certain limit. When the frequency increases beyond that limit, several factors combine to rapidly decrease the tube’s efficiency. The high-frequency effects in conventional tubes are circuit reactance (inter-electrode capacitance, lead inductance), transit-time effect, cathode emission, plate-heat dissipation, power loss due to skin effect, radiation and dielectric loss.
| Microwave devices |
| Conventional devices. Klystrons, magnetrons, traveling-wave tubes, backward-wave oscillators and crossed-field amplifiers New-generation devices. Cyclotron resonance devices (gyrotrons, gyro-TWTs and klystron-BWOs), Cerenkov radiation devices (magnetrons/BWOs/TWTs, orotrons, magnetically insulated line oscillators), Doppler effect-based devices (free-electron lasers, ubitrons, cyclotron auto-resonance masers), space-charge devices (virtual cathode oscillators) and multi-beam devices |
Tubes that are efficient in the microwave range usually operate on the theory of velocity modulation. The microwave tube uses transit time in the conversion of DC power into radio-frequency power. The interchange of power is obtained by using the principle of electron velocity modulation and low-loss resonant cavities in the microwave tube.
Velocity modulation is define as the variation in the velocity of a beam of electrons caused by the alternate speeding up and slowing down of the electrons beam. This variation is usually caused by a voltage signal applied between the grids through which the beam must pass. The directions of the electron beam and the static electrical field are parallel to linear beam tubes. Against this, the field sinfluencing the electron beam stand vertically by the electron beam at the crossed-field tubes.
Magnetron—a microwave device
Magnetrons are a special form of diodes. Electrons move between the cathode and anode in a curved fashion, and thus the electric field and the magneti field are normal to the electron beam. When an electron is slowed down by an electric or magnetic field, it gives up energy, making the field stronger. If an electron’s speed is increased by an electric or magnetic field, it weakens the field.
An amplifier tube circuit that generates radio frequency signals is called an oscillator. A resonant circuit consisting of an inductor (coil) in parallel with a capacitor determines the frequency and wavelength of the oscillator. The lesser the number of turns in the coil, the smaller the capacitor plates and the higher the radio frequency that the oscillator generates.
Magnetrons have a central cylindrical cathode surrounded by an anode in the form of a thick cylindrical shell. Top and bottom plates form the remainder of the vacuum envelope. These plates are placed between the poles of a strong magnet.
The controlled resonant circuit problem at microwave frequencies is solved by using hollow metal cylinders as a resonator. The round cylinder walls are similar to a one-turn coil and the cylinder end plates are like a very small capacitor. These cylindrical resonators are called microwave cavities. By moving one of the cavity’s end plates in or out of the cylinder, the frequency of the oscillator can be tuned. The cylinder must be about a wavelength in diameter and about one-half wavelength long at the resonant frequency. Energy can flowin and out of the resonator through a hole in the cylinder wall.
| Future technology |
| 1. Multiple-beam klystrons for synthetic-aperture radars and missile seekers 2. TWTs for towed decoys 3. Microwave power modules based transmit/receive modules for phased-array radars 4. High-power microwave devices for directed-energy weapons 5. Gyro TWTs for radar applications 6. Vacuum microelectronics based microwave devices (TWT on a chip) 7. Tera-hertz devices for secure high-data-rate communication, imaging and radar 8. Microwave power beaming rectennas 9. Microwave propulsion 10. Microwave plasma chemistry 11. Microwave-generated artificial ionospheric mirrors (over-the-horizon radars and battlefield illumination) |
The microwave fields from the resonators extend into the region between the cathode and anode. A strong magnetic field makes the highspeed electrons move such that these don’t reach the anode and return to the cathode, unless slowed down by giving up energy to a cavity electric field.
If the electrons arrive at the wrong time, these take energy from the microwave field, speed up and spiral back t the cathode. At the correct voltage and microwave frequency, the electrons move at the correct velocity to continue to loose speed and give up most of the energy to the microwave field before the impact on the anode.
Other devices
Magnetron oscillator was the first device developed that was capable of generating large powers at microwave frequencies. Later, improved devices such as travelling-wave tube amplifiers (TWTAs) were developed for use in microwave systems. Yet, magnetron production continues for use in micro-wave ovens.
Cross-field amplifier (CFA) is another microwave power amplifier. It is a cross between TWTs and magnetrons in its operation. It has a magnetron structure to provide interaction between crossed DC electric and magnetic fieldson one hand and RF field on he other. It also uses a slow-wave structure, as in TWT, to provide a continuous interaction between the electron beam and a moving RF field.
The backward-wave oscillator (BWO) is also a microwave-frequency and velocity-modulated tube that operates on the same principle as the TWT. However, a travelling wave that moves from the electron gun end of the tube towards the collector is not used in the BWO. Instead, the BWO extracts energy from the electron beam using a backward wave that travels from the collector towards the electron gun (cathode).
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